IR2181PBF

Data Sheet No. PD60172 Rev.G IR2181(4)(S) & (PbF) HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V and 5V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity Output source/sink current capability 1.4A/1.8A Also available LEAD-FREE (PbF) Packages 8-Lead PDIP IR2181 14-Lead PDIP IR21814 8-Lead SOIC IR2181S 14-Lead SOIC IR21814S IR2181/IR2183/IR2184 Feature Comparison Description Part The IR2181(4)(S) are high voltage, 2181 COM high speed power MOSFET and IGBT HIN/LIN no none 180/220 ns 21814 VSS/COM drivers with independent high and low 2183 Internal 500ns COM HIN/LIN yes 180/220 ns side referenced output channels. Pro21834 Program 0.4 ~ 5 us VSS/COM 2184 Internal 500ns COM prietary HVIC and latch immune IN/SD yes 680/270 ns 21844 Program 0.4 ~ 5 us VSS/COM CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Input logic Cr...