Data Sheet No. PD60172 Rev.G
IR2181(4)(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for boo...
Data Sheet No. PD60172 Rev.G
IR2181(4)(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V Tolerant to negative transient
voltage dV/dt immune Gate drive supply range from 10 to 20V Under
voltage lockout for both channels 3.3V and 5V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity Output source/sink current capability 1.4A/1.8A Also available LEAD-FREE (PbF)
Packages
8-Lead PDIP IR2181 14-Lead PDIP IR21814
8-Lead SOIC IR2181S
14-Lead SOIC IR21814S
IR2181/IR2183/IR2184 Feature Comparison
Description
Part
The IR2181(4)(S) are high
voltage, 2181 COM high speed power
MOSFET and IGBT HIN/LIN no none 180/220 ns 21814 VSS/COM drivers with independent high and low 2183 Internal 500ns COM HIN/LIN yes 180/220 ns side referenced output channels. Pro21834 Program 0.4 ~ 5 us VSS/COM 2184 Internal 500ns COM prietary HVIC and latch immune IN/SD yes 680/270 ns 21844 Program 0.4 ~ 5 us VSS/COM
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Input logic
Cr...