IR2113S

Data Sheet No. PD60147 Rev.T IR2110(S)/IR2113(S) & (PbF) HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Also available LEAD-FREE Product Summary VOFFSET (IR2110) (IR2113) IO+/VOUT ton/off (typ.) 500V max. 600V max. 2A / 2A 10 - 20V 120 & 94 ns Delay Matching (IR2110) 10 ns max. (IR2113) 20ns max. Packages Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan16-Lead SOIC nels. Proprietary HVIC and latch immune CMOS technologies enable 14-Lead PDIP IR2110S/IR2113S ruggedized monolithic construction. Logic inputs are compatible with IR2110/IR2113 (Also available standard CMOS or LSTTL output, down to 3.3V logic. The output LEAD-FREE (PbF)) drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side conf...