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Data Sheet No. PD-6.026C
IR2112
HIGH AND LOW SIDE DRIVER
Features
n Floating...
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Data Sheet No. PD-6.026C
IR2112
HIGH AND LOW SIDE DRIVER
Features
n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient
voltage dV/dt immune n Gate drive supply range from 10 to 20V n Under
voltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n
CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs
Product Summary
VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600V max. 200 mA / 420 mA 10 - 20V 125 & 105 ns 30 ns
Packages
Description
The IR2112 is a high
voltage, high speed power
MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
HO VDD HIN SD LIN VSS VCC V DD HIN SD LIN V SS VCC COM LO VB VS TO LOAD
To Order
CONTROL I NTEGRATED CIRCUIT DESIGNERSÂ’ MANUAL
B-47
P...