IR2103S

Features  Floating channel designed for bootstrap operation  Fully operational to +600V  Tolerant to negative transient voltage  dV/dt immune  Gate drive supply range from 10 to 20V  Undervoltage lockout  3.3V, 5V and 15V logic compatible  Cross-conduction prevention logic  Matched propagation delay for both channels  Internal set deadtime  High side output in phase with HIN input  Low side output out of phase with LIN input IR2103(S)PBF Half-Bridge Driver Product Summary VOFFSET (max) IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V 130mA / 270mA 10V – 20V 680 & 150 ns 520 ns Description Package Options The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. 8 Lead SOIC 8 Lead PDIP Ordering Information Base Part Number IR2103SPBF IR2103SPBF IR2103PBF Package Type SO8N SO8N PDIP8 Standard Pack Form Quantity Tube 95 Tape and Reel 2500 Tube 50 Orderable Part Number IR2103SPBF IR2103STRPBF IR2103PBF 1 www.irf.com © 2013 International Rectifier April 18,...