IR20153SPbF

Preliminary Data Sheet PD60214 Rev B IR20153S & (PbF) HIGH SIDE DRIVER WITH RECHARGE Features Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 5V to 20V Undervoltage lockout Internal recharge FET for bootstrap refresh Internal deadtime of 11µs and 0.8µs CMOS Schmitt-triggered input logic Output out of phase with input Reset input Split pull-up and pull-down gate drive pins Also available LEAD-FREE (PbF) Product Summary VOFFSET IO+/VOUT ton/off 150V max. 400mA @ VBS=7V, 1.5A @ VBS=16V 5-20V 1.0 and 0.3 µs Description The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high or low side configuration which operates up to 150 volts. Package 8-Lead SOIC Typical Connection up to 150V VCC IN VCC IN GND VB HOH HOL VS RESET RESET (Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. Load www.irf.com 1 IR20153S & (PbF) Absolute Maximum Ratings Absolute ...