Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH V...
Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH
VOLTAGE HALF BRIDGE
Features
Output Power
MOSFETs in half-bridge configuration 500V rated breakdown
voltage High side gate drive designed for bootstrap
operation Matched propagation delay for both channels Under
voltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD
Product Summary
VIN (max) ton/off trr
250V- 214/224 500V - 420
RDS(on)
Description
The IR01H(D)xxx is a high
voltage, high speed half bridge. Proprietary HVIC and latch immune
CMOS technologies, along with the HEXFET power
MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard
CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power
MOSFETs are matched to simplify use.
Typical Connection
w
w
VIN Vcc H IN L IN
w
.D
t a
S a
D1
Vcc VB
e h
PD(TA = 25oC)
t e
U 4
.c
130 & 90 ns 260 ns
m o
2.0Ω - H214 1.1Ω - H224 3.0Ω - H420 2.0W 4.0W - P2
Packages
HV DC Bus
NOTE: D1 is not required for the HD type
6
1
2
H IN
VIN
VO
9
3
L IN
7
COM
TO LOAD
4
COM
1
...