IPW65R070C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final www.DataSheet4U.net Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor IPW65R070C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. drain pin 2 Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Qualified for industrial grade applications according to JEDEC1) Pb-free plating, Halogen free mold compound gate pin 1 source pin 3 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 700 0.07 170 150 13 300 Package PG-TO247 Unit V  nC A µJ A/µs Marking 65C6070 Related Links IFX CoolMOS Webpa...