CoolMOSTM Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High...
CoolMOSTM Power Transistor
Features Lowest figure-of-merit RONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ
IPW60R165CP
650 V 0.165 Ω
39 nC
PG-TO247-3-1
CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom
Type IPW60R165CP
Package
Ordering Code
PG-TO247-3-1 SP000095483
Marking 6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse
Symbol Conditions
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
E AS
I D=7.9 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3) AR
E AR
I D=7.9 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3) AR
I AR
MOSFET dv /dt ruggedness Gate source
voltage
Power dissipation Operating and storage temperature Mounting torque
dv /dt V GS
V DS=0...480 V static AC (f >1 Hz)
P tot
T C=25 °C
T j, T stg
M3 and M3.5 screws
Rev. 2.1
page 1
Value 21 13 61 522
0.79
7.9
50 ±20 ±30 192 -55 ... 150 60
Unit A
mJ
A V/ns V W °C Ncm
2007-05-09
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPW60R165CP
Value 12 61 15
Unit A
V/ns
Parameter
Symbol Conditions
Values
Unit
...
