Data Sheet No.PD60204
IPS024G
QUAD FULLY PROTECTED POWER MOSFET SWITCH
Features
• • • • •
Over temperature shutdown Ove...
Data Sheet No.PD60204
IPS024G
QUAD FULLY PROTECTED POWER
MOSFET SWITCH
Features
Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection
Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 150mΩ (max) 50V 6A 1.5µs
Description
The IPS024G are fully protected quad low side SMART POWER
MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER
MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power
MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
16-Lead SOIC IPS024G (Quad)
Typical Connection
Load
R in series (if needed)
Q
D IN control
S
S Logic signal
(Refer to lead assignment for correct pin configuration)
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IPS024G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.
Symbol Parameter
Vds Vin Iin, max Isd cont. Maxi...