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IPP65R600E6 Datasheet

Part Number IPP65R600E6
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description MOSFET
Datasheet IPP65R600E6 DatasheetIPP65R600E6 Datasheet (PDF)

MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFE.

  IPP65R600E6   IPP65R600E6






Part Number IPP65R600E6
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPP65R600E6 DatasheetIPP65R600E6 Datasheet (PDF)

isc N-Channel MOSFET Transistor IPP65R600E6,IIPP65R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drai.

  IPP65R600E6   IPP65R600E6







MOSFET

MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features  Extremely low losses due to very low F O M R dson*Qg and E oss  Very high commutation ruggedness  Easy to use/drive  JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2) Appl.


2011-08-01 : IPA075N15N3G    IPA093N06N3    IPA105N15N3G    IPA65R280C6    IPA65R280E6    IPA65R310CFD    IPA65R380C6    IPA65R380E6    IPA65R420CFD    IPA65R600C6   


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