IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 12.4 mW 67 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to J...