IPP100N06S3L-03

www.DataSheet4U.com IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS®-T Power-Transistor Features N-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 2.7 100 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-87978 SP0000-87979 SP0000-87977 Marking 3PN06L03 3PN06L03 3PN06L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D=50 A Value Unit A 100 100 400 690 55 ±16 300 -55 ... +175 55/175/56 mJ V V W °C Rev. 1.0 page 1 2005-09-16 www.DataSheet4U.com IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical char...