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IPI04CN10NG Datasheet

Part Number IPI04CN10NG
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPI04CN10NG DatasheetIPI04CN10NG Datasheet (PDF)

IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"#™2 Power-Transistor Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"\[# Product Summary V ;I R  - @ ?>2 I.)     I; )(( K +&1 Z" )(( 7 R   U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E R+ F2 =:7:65 2 44@ C5:?8 E@ %   )# 7@ CE2 C86E2 AA=:42 E:@ ? R$562 =7@ C9:89 7C6BF6?4J DH:E49:?8 2 ?5 DJ?49C@ ?@ FDC64E:7:42 E:@ ? R# 2 =@ 86? 7C66 2 4.

  IPI04CN10NG   IPI04CN10NG






Part Number IPI04CN10N
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPI04CN10NG DatasheetIPI04CN10N Datasheet (PDF)

isc N-Channel MOSFET Transistor NCHANGE Semicon Iductor IPI04CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Cur.

  IPI04CN10NG   IPI04CN10NG







Part Number IPI04CN10N
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPI04CN10NG DatasheetIPI04CN10N Datasheet (PDF)

IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"#™2 Power-Transistor Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"[# Product Summary V ;I R  - @ ?>2 I.)     I; )(( K +&1 Z" )(( 7 R   U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E R+ F2 =:7:65 2 44@ C5:?8 E@ %   )# 7@ CE2 C86E2 AA=:42 E:@ ? R$562 =7@ C9:89 7C6BF6?4J DH:E49:?8 2 ?5 DJ?49C@ ?@ FDC64E:7:42 E:@ ? R# 2 =@ 86? 7C66 2 44@.

  IPI04CN10NG   IPI04CN10NG







Power-Transistor

IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"#™2 Power-Transistor Features R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE2 ?46 R ;I"\[# Product Summary V ;I R  - @ ?>2 I.)     I; )(( K +&1 Z" )(( 7 R   U @ A6C2 E:?8 E6>A6C2 EFC6 R* 3 7C66 =62 5 A=2 E:?8 , @ # - 4@ >A=:2 ?E R+ F2 =:7:65 2 44@ C5:?8 E@ %   )# 7@ CE2 C86E2 AA=:42 E:@ ? R$562 =7@ C9:89 7C6BF6?4J DH:E49:?8 2 ?5 DJ?49C@ ?@ FDC64E:7:42 E:@ ? R# 2 =@ 86? 7C66 2 44@ C5:?8 E@ $        Type $*    ( ( " $* $   ( ( " $* *   ( ( " Package Marking F>%JE*.+%+ (,9D)(D F>%JE*.*%+ (,9D)(D F>%JE**(%+ (,9D)(D Maximum ratings, 2 ET W   U  F?=6DD@ E96CH:D6 DA64:7:65 Parameter Symbol Conditions Value  @ ?E:?F@ FD5C2 :? 4FCC6?E * F=D65 5C2 :? 4FCC6?E+#  G2 =2 ?496 6?6C8J D:?8=6 AF=D6 " 2 E6 D@ FC46 G@ =E2 86 ,# * @ H6C5:DD:A2 E:@ ? ) A6C2 E:?8 2 ?5 DE@ C2 86 E6>A6C2 EFC6 I; T 9   U *# T 9 U I ;$]bY`R T 9   U E 7I I ;   R >I   " V >I P a\a T 9   U T W T `aT $  4=:>2 E:4 42 E68@ CJ  $( $    )(( )(( ,(( )((( r*( +((           Unit 7 ZA K L U , 6G  A2 86   IPB04CN10N G IPI04CN10N G IPP04CN10N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics .96C>2 =C6D:DE2 ?46 ;F?4E:@ ? 42 D6 R aUA9 % .96C>2 =C6D:DE2 ?46 R aUA7 >:?:>2 =7@ @ EAC:?E ;F?4E:@ ? 2 >3 :6?E  4>* 4@ @ =:?8 2 C6.


2020-09-30 : 2SJ527    BUK444-600A    BUK438-500B    BUK438-500A    BUK436-800B    BUK436-800A    2SD2141    2SD2062    2SD2066    2SD2051   


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