IPF06N03LA

IPF06N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Product Summary V DS R DS(on),max ID 25 5.4 50 V mΩ A P-TO252-3-23 Type IPF06N03LA Package P-TO252-3-23 Ordering Code Q67042-S4194 Marking 06N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C2) I D=45 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 350 300 6 ±20 94 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.2 page 1 2003-12-19 IPF06N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=50 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source le...