IPD60R1K0CE

isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.8 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 61 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.06 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.13mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=1.5A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=1.9A, VGS = 0V MIN TYP MAX UNIT 600 V 2.5 3.5 V 1 Ω 0.1 μA 1 μA 0.9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The...