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IPD26N06S2L-35
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode • Aut...
www.DataSheet4U.com
IPD26N06S2L-35
OptiMOS® Power-Transistor
Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
Product Summary V DS R DS(on),max (SMD version) ID 55 35 30 V mΩ A
PG-TO252-3-11
Type IPD26N06S2L-35
Package PG-TO252-3-11
Marking 2N06L35
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse Gate source
voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=26A Value 30 22 120 80 ±20 68 -55 ... +175 55/175/56 mJ V W °C Unit A
Rev. 1.0
page 1
2006-07-18
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IPD26N06S2L-35
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=26 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125...