isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤2.5mΩ ·En...
isc N-Channel
MOSFET Transistor IPD025N06N, IIPD025N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Optimized for synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
60
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
90
IDM
Drain Current-Single Pulsed
360
PD
Total Dissipation @TC=25℃
167
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 0.9 62
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor IPD025N06N, IIPD025N06N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=95μA
60
V
2.1
3.3
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=90A
2.5 mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=60V; VGS= 0V
VSD
Diode forward
voltage
IF=90A, VGS = 0V
0.1
μA
1
μA
1.2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time witho...
