IPB60R199CPA

IPB60R199CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 V 0.199 Ω 33 nC Features Lowest figure-of-merit Ron x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applications PG-TO263-3 Type IPB60R199CPA Package PG-TO263-3 Marking 6R199A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating temperature Storage temperature Rev. 2.0 I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg page 1 V DS=0...480 V static T C=25 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V Value 16 10 51 436 0.66 6.6 50 ±20 139 -40 ... 150 -40 ... 150 2009-09-01 A V/ns V W °C mJ Unit A www.DataSheet4U.net IPB60R199CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD v...