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IPB60R099CPA

Infineon Technologies

Power Transistor

IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features • World...



IPB60R099CPA

Infineon Technologies


Octopart Stock #: O-703283

Findchips Stock #: 703283-F

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IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features Worldwide best Rds,on in TO263 Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applications PG-TO263-3 Type IPB60R099CPA Package PG-TO263-3-2 Marking 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions ID T C=25 °C T C=100 °C Value 31 19 93 800 1.2 11 Unit A Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating temperature Storage temperature I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V mJ A V/ns V W °C V DS=0...480 V static T C=25 °C 50 ±20 255 -40 ... 150 -40 ... 150 www.DataSheet4U.net Rev. 2.1 page 1 2009-03-25 IPB60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, d...




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