IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Exc...
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 12.4 mW 67 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
Type
IPB12CN10N G
IPD12CN10N G
IPI12CN10N G
IPP12CN10N G
Package
PG-TO263-3
PG-TO252-3
Marking
12CN10N
12CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO262-3 12CN10N
PG-TO220-3 12CN10N
Value
Unit
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=67 A, R GS=25 W
Reverse diode dv /dt
dv /dt
I D=67 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C
Gate source
voltage3)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
67 48 268 154
6
±20 125 -55 ... 175 55/175/56
A
mJ kV/µs V W °C
Rev. 1.08
page 1
2013-07-09
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, ju...
