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Type
IPB075N04L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 40 7.5 50 V mΩ A
PG-TO263-3
Type IPB075N04L G
Package PG-TO263-3
Marking 075N04L.
Power-Transistor
www.DataSheet4U.com
Type
IPB075N04L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant
1)
Product Summary V DS R DS(on),max ID 40 7.5 50 V mΩ A
PG-TO263-3
Type IPB075N04L G
Package PG-TO263-3
Marking 075N04L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage
1)
Value 50 46 50 40 350 50 20 ±20
Unit A
I D,pulse I AS E AS V GS
T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω
mJ V
J-STD20 and JESD22
Rev. 1.0
page 1
2007-12-11
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IPB075N04L G
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 56 -55 ... 175 55/175/56 Unit W °C
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area 4) Electrical characteristics, at T j=25 °C, .