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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal le...
www.DataSheet4U.com
IPB06CN10N G
IPI06CN10N G IPP06CN10N G
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO263) ID 100 6.2 100 V mΩ A
Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP06CN10N G
Package Marking
PG-TO263-3 06CN10N
PG-TO262-3 06CN10N
PG-TO220-3 06CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source
voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Value 100 88 400 480 6 ±20 214 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A
Rev. 1.05
page 1
2006-06-02
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IPB06CN10N G
IPI06CN10N G IPP06CN10N G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.7 62 40 K/W
Electrical characteristics, at T j=25 °C, unless other...