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IPB04N03LA G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qua...
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IPB04N03LA G
OptiMOS®2 Power-Transistor
Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target applications N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max (SMD version) ID 25 3.9 80 V mΩ A
PG-TO263
Type IPB04N03LA G
Package PG-TO263
Marking 04N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source
voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1)
Value 80 80 385 290 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C3) I D=77 A, R GS=25 Ω I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
107 -55 ... 175 55/175/56
J-STD20 and JESD22
Rev. 1.7
page 1
2006-05-10
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IPB04N03LA G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage dr...