IPB04CNE8NG

www.DataSheet4U.com IPB04CNE8N G IPP04CNE8N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 3.9 100 V mΩ A Ideal for high-frequency switching and synchronous rectification Type IPB04CNE8N G IPP04CNE8N G Package Marking PG-TO263-3 04CNE8N PG-TO220-3 04CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Gate source voltage 4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω Value 100 100 400 1000 ±20 300 -55 ... 175 55/175/56 mJ V W °C Unit A Rev. 1.01 page 1 2007-10-25 www.DataSheet4U.com IPB04CNE8N G IPP04CNE8N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.5 62 40 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V...