IPA90R500C3

IPA90R500C3 CoolMOS™ Power Transistor Features Lowest figure-of-merit R ON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 0.5 68 V Ω nC PG-TO220 FP CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type IPA90R500C3 Package PG-TO220 FP Marking 9R500C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature Mounting torque www.DataSheet4U.net Value 11 6.8 24 388 0.74 2.2 50 ±20 ±30 34 -55 ... 150 Unit A T C=25 °C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V mJ A V/ns V P tot T J, T stg T C=25 °C W °C Ncm 2008-07-29 M2.5 screws page 1 50 Rev. 1.0 IPA90R500C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Reverse diode d v /dt 5) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.6 23 4 V/ns Unit A Parameter Symbol Condi...