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IPA90R340C3

Infineon Technologies

CoolMOS Power Transistor

IPA90R340C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak cur...


Infineon Technologies

IPA90R340C3

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Description
IPA90R340C3 CoolMOS™ Power Transistor Features Lowest figure-of-merit R ON x Qg Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R DS,on in TO220 Fullpak Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J = 25°C Q g,typ 900 0.34 94 V Ω nC PG-TO220 FP CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type IPA90R340C3 Package PG-TO220 FP Marking 9R340C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t AR3),4) Avalanche current, repetitive t AR3),4) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature Mounting torque www.DataSheet4U.net Value 15 9.5 34 678 1 3.1 50 ±20 ±30 35 -55 ... 150 Unit A T C=25 °C I D=3.1 A, V DD=50 V I D=3.1 A, V DD=50 V mJ A V/ns V P tot T J, T stg T C=25 °C W °C Ncm 2008-07-29 M2.5 screws page 1 50 Rev. 1.0 IPA90R340C3 Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous diode forward current 2) Diode pulse current 3) Reverse diode d v /dt 5) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.2 ...




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