MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor IPA80R460CE
Data...
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor IPA80R460CE
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
800VCoolMOS™CEPowerTransistor
IPA80R460CE
1Description
CoolMOS™CEisarevolutionarytechnologyforhigh
voltagepower
MOSFETs.Thehigh
voltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features
High
voltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound Qualifiedforconsumergradeapplications
Applications
LEDLightingandAdapterinQRFlybacktopology
Pleasenote:For
MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
TO-220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C RDS(on),max
800 460
V mΩ
Qg.typ
64
nC
ID,pulse
33
A
Eoss@400V
4.6
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode IPA80R460CE
Package PG-TO 220 FullPAK
Marking 8R460CE
RelatedLinks see Appendix A
Final Data Sheet
2 Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R460CE
TableofContents
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