MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor IPA80R1K0CE
Data...
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor IPA80R1K0CE
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
800VCoolMOS™CEPowerTransistor
IPA80R1K0CE
1Description
CoolMOS™CEisarevolutionarytechnologyforhigh
voltagepower
MOSFETs.Thehigh
voltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features
High
voltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound Qualifiedforconsumergradeapplications
Applications
LEDLightingforretrofitapplicationsinQRFlybacktopology
Pleasenote:For
MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
TO-220FP
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C RDS(on),max
800 950
V mΩ
Qg.typ
31
nC
ID,pulse
18
A
Eoss@400V
2.4
µJ
Body diode di/dt
400
A/µs
Type/OrderingCode IPA80R1K0CE
Package PG-TO 220 FullPAK
Marking 8R1K0CE
RelatedLinks see Appendix A
Final Data Sheet
2 Rev.2.1,2015-06-23
800VCoolMOS™CEPowerTransistor
IPA80R1K0CE
TableofContents
Description . . . . . . . . ....