IPA60R650CE

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 9.9 6.2 A IDM Drain Current-Single Pulsed 19 A PD Total Dissipation @TC=25℃ 28 W Tj Max. Operating Junction Temperature -40~150 ℃ Tstg Storage Temperature -40~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 4.5 ℃/W Rth(ch-a) Channel-to-ambient thermal resistance 80 ℃/W IPA60R650CE isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R650CE ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=0.2mA 2.5 3 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.4A 0.54 0.65 Ω IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V;Tj=25℃ VDS= 600V; VGS= 0V; Tj=150℃ VSDF D...