IDT7MMV4101

128K x 24 Three Megabit 3.3V CMOS Static RAM IDT7MMV4101 x x Features High density 3 megabit 3.3V static RAM Low profile 119 lead, 14mm x 22mm BGA (Ball Grid Array) Fast RAM access times: 10,12,15ns Single 3.3V power supply Multiple Vcc & GND pins for maximum noise immunity Inputs/outputs directly LVTTL compatible Commercial (0O C to +70O C) Industrial (-40O C to +85O C) temperature options – Commercial: 10 / 12 / 15 ns – Industrial: 12 / 15 ns Description The IDT7MMV4101 is a three megabit static RAM constructed on an multilayer laminate substrate using three 3.3V, 128K x 8 (IDT71V124) static RAMS encapsulated in a Ball Grid Array (BGA). The IDT7MMV4101 is packaged in a plastic BGA. The BGA configuration allows 119 leads to be placed on a package 14mm by 22mm. At a maximum of 3.5mm high, this low-profile surface mount package is ideal for ultra dense systems. All inputs and outputs of the IDT7MMV4101 are LVTTL compatible and operate from a single 3.3V supply. Full asynchronous circuitry requires no clocks or refresh for operation and provides equal access and cycle times for ease of use. x x x x x Pin Names I/O0 - 23 A0 - 16 CS WE OE VCC GND NC Data Inputs/Outputs Addresses Chip Select Write Enable Output Enable Power Ground No Connect 4083 tbl 01 Functional Block Diagram A0-16 CS WE OE 17 128K x 8 SRAM 128K x 8 SRAM 128K x 8 SRAM 8 8 8 , I/O0-7 I/O8-15 I/O16-23 4083 drw 01 Pin Configuration 7 NC NC A8 A7 CS A6 A5 I/O0 NC NC NC NC NC I/O1 VCC I/O2 I/O...