IDT6168LA

CMOS STATIC RAM 16K (4K x 4-BIT) Integrated Device Technology, Inc. IDT6168SA IDT6168LA FEATURES: High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) Low power consumption Battery backup operation—2V data retention voltage (IDT6168LA only) Available in high-density 20-pin ceramic or plastic DIP, 20pin SOIC. Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Bidirectional data input and output Military product compliant to MIL-STD-883, Class B DESCRIPTION: The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The lowpower (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is packaged in either a space sa...