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IDT08S60C

Infineon Technologies AG

2nd Generation thinQ SiC Schottky Diode


Description
IDT08S60C www.DataSheet4U.com 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according ...



Infineon Technologies AG

IDT08S60C

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