IC62LV1008LL

www.DataSheet4U.com IC62LV1008L IC62LV1008LL Document Title 1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No 0A History Initial Draft Draft Date January 3,2002 Remark Preliminary The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices. Integrated Circuit Solution Inc. LPSR015-0A 1/3/2002 1 IC62LV1008L IC62LV1008LL 1M x 8 LOW POWER and LOW VCC CMOS STATIC RAM FEATURES Access times of 55, 70, 100 ns CMOS Low power operation: ICC=15mA (typical)* operation ISB2=2µA (typical)* standby Low data retention voltage: 1.5V (min.) Output Enable (OE) and Two Chip Enables (CE1, CE2) inputs for ease in applications TTL compatible inputs and outputs Fully static operation: — No clock or refresh reguired Single 2.7V-3.6V power supply Wafer level burn in test mode Available in the know good die form and 48-pin 8*10mm TF-BGA * Typical values are measured at VCC=3.0V, TA=25°C Preliminary DESCRIPTION The ICSI IC62LV1008L and IC62LV1008LL is a low voltage, ICSI's low voltage, six transistor (6T), CMOS technology. The 1,048,576 words by 8 bits, CMOS SRAM. It is fabricated using device is targeted to satisfy the demands of the state-of-the-art technologies such as cell phones and pagers. When CE1 is HIGH or CE2 is LOW (deselected), the device ...