I772

www.DataSheet4U.com DC COMPONENTS CO., LTD. R I772 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 10W audio amplifier, voltage regulator, DC-DC converter, and relay driver. TO-251 .268(6.80) .252(6.40) .217(5.50) .205(5.20) 2 Pinning 1 = Base 2 = Collector 3 = Emitter .022(0.55) .018(0.45) .063(1.60) .055(1.40) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC IB PD TJ TSTG Rating -40 -30 -5 -3 -7 -600 10 +150 -55 to +150 Unit V V V A A mA W o o .284(7.20) .268(6.80) 1 .035 Max (0.90) 2 3 .059(1.50) .035(0.90) .256 Min (6.50) .024(0.60) .018(0.45) .032 Max (0.80) .181 Typ (4.60) .095(2.40) .087(2.20) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2% Min -40 -30 -5 30 100 - Typ -0.3 -1 80 55 Max -1 -1 -0.5 -2 500 - Unit V V V µA µA V V MHz pF Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V, f=100MHz VCB=-10V, f=1MHz Col...