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I2N60

N-Channel Power MOSFET

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SEMICONDUCTOR

I2N60 Series RRooHHSS

Nell High Power Products
N-Channel Power MOSFET 12A, 600Volts

DESCRIPTION
The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES

RDS(ON) = 0.8Ω @ VGS = 10V Ultra low gate charge(54nC max.) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature

PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.

12 600 0.8 @ VGS = 10V 54

D

GDS
TO-220AB (12N60A)

GDS
TO-220F (12N60AF)

D (Drain)

G (Gate)
S (Source)

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL

PARAMETER

TEST CONDITIONS

VDSS

Drain to Source voltage

TJ=25°C to 150°C

VDGR

Drain to Gate voltage

RGS=20KΩ

VGS Gate to Source voltage

ID Continuous Drain Current
IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1)

TC=25°C TC=100°C
lAR=12A,RGS=50Ω, VGS=10V

EAS Single pulse avalanche energy (Note 2)

lAS=12A, L = 10mH

dv/dt

Peak diode recovery dv/dt(Note 3)

PD Total power dissipation

TC=25°C

TO-220AB TO-220F

TJ TSTG

Operation junction temperature Storage temperature

TL Maximum soldering temperature, for 10 seconds 1.6mm from case

Mounting torque, #6-32 or M3 screw

Note: 1.Repetitive rating: pulse width limited by junction temperature.. 2.IAS=12A, VDD=50V, L= 10mH, RGS=25Ω, starting TJ = 25 °C. 3.ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.

www.nellsemi.com

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VALUE 600 600 ±30 12 7.4 48 12 24 790 4.5 225 51
-55 to 150 -55 to 150
300 10 (1.1)

UNIT V
A
mJ V /ns
W ºC lbf.in (N.m)

SEMICONDUCTOR

I2N60 Series RRooHHSS
Nell High Power Products

THERMAL RESISTANCE
SYMBOL

PARAMETER

Rth(j-c)

Thermal resistance, junction to case

Rth(j-a)

Thermal resistance, junction to ambient

TO-220AB TO-220F TO-220AB TO-220F

Min. Typ. Max.
0.56 2.4 62.5 62.5

UNIT ºC/W ºC/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL

PARAMETER

TEST CONDITIONS

OFF CHARACTERISTICS

V(BR)DSS

Drain to source breakdown voltage

ID = 250µA, VGS = 0V

▲ ▲V(BR)DSS/


























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