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HZU6.2Z Datasheet

Part Number HZU6.2Z
Manufacturers Hitachi
Logo Hitachi
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet HZU6.2Z DatasheetHZU6.2Z Datasheet (PDF)

HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581(Z) Rev 0 Oct. 1997 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2Z Laser Mark 62Z Package Code URP Outline Cathode mark Mark 1 62Z 2 1. Cathode 2. Anode HZU6.2Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj .

  HZU6.2Z   HZU6.2Z






Part Number HZU6.2L
Manufacturers Hitachi
Logo Hitachi
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet HZU6.2Z DatasheetHZU6.2L Datasheet (PDF)

HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-776(Z) Rev 0 Feb. 1999 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2L Laser Mark 62C Package Code URP Outline Cathode mark Mark 1 62C 2 1. Cathode 2. Anode HZU6.2L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2.

  HZU6.2Z   HZU6.2Z







Part Number HZU6.2
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon Epitaxial Planar Zener Diodes
Datasheet HZU6.2Z DatasheetHZU6.2 Datasheet (PDF)

HZU Series Silicon Planar Zener Diode for Stabilizer Features • These diodes are delivered taped. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU Series Laser Mark Let to Mark Code Package Name URP Pin Arrangement Cathode mark Mark 1 2•0 2 1. Cathode 2. Anode REJ03G0625-0900 Rev.9.00 Jul 06, 2006 Package Code PTSP0002ZA-A Rev.9.00 Jul 06, 2006 page 1 of 7 HZU Series Absolute Maximum Ratings Item Power dissipation Junction temper.

  HZU6.2Z   HZU6.2Z







Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581(Z) Rev 0 Oct. 1997 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2Z Laser Mark 62Z Package Code URP Outline Cathode mark Mark 1 62Z 2 1. Cathode 2. Anode HZU6.2Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.90 — — — Typ — — 8.0 — Max 6.50 3 8.5 60 Unit V µA pF Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA 2 HZU6.2Z Main Characteristic 10 -2 250 Polyimide board 20hx15wx0.8t Power Dissipation Pd (mW) (A) 10 -3 200 3.0 1.5 Iz 150 1.5 unit: mm Zener Current 10 -4 100 10 -5 50 10 -6 0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Fig.1 Zener current Vs. Zener voltage 10 4 Nonrepetitive Surge Reverses Power PRSM (W) PRSM t 10 3 Ta = 25°C nonrepetitive 10 2 10 1.0 10 -5 10 -4 10 -3 10 (s) -2 10 -1 1.0 Time t Fig.3 Surge Reverse Power Ratings 0.8 3 HZU6.2Z Main Characteristic 10 Transient Thermal Impedance Z th (°C/W) 4 .


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