HZM68ZWA

HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-613A(Z) Rev 1 Jan. 1999 Features HZM6.8ZWA has two devices, and can absorb external + and -surge. Low capacitance (C=25pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.8ZWA Laser Mark 68Z Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HZM6.8ZWA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd  Min 6.47    20 Typ      Max 7.00 2 25 30  Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at VR = 3.5V. 2 HZM6.8ZWA Main Characteristic 10 -2 250 1.0mm Power Dissipation Pd (mW) (A) 10 -3 200 Cu Foil Iz 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil Zener Current 10 -4 100 10 -5 50 10 -6 0 0 2 4 6 8 10 0 50 100 150 200 Zener Voltage Vz (V) Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Fig.1 Zener cu...