3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules
HYS64V1000GS-10/-12/-15 HYS...
3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules
HYS64V1000GS-10/-12/-15 HYS72V1000GS-10/-12/-15
Target Information
168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module 1 bank 1M x 64, 1M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Performance:
-10 fCK tCK3 tAC3 Clock frequency Clock cycle time Clock access time
CAS latency = 3
-12 83 12 11
-15 66 15 13
Units MHz ns ns
100 10 9
Single +3.3V(± 0.3V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence Auto Refresh (CBR) and Self Refresh Decoupling
capacitors mounted on substrate All inputs, outputs are LVTTL compatible Serial presence detects Utilizes four / five 1M x 16 SDRAMs in TSOPII-50 packages 4096 refresh cycles every 64 ms Gold contact pad Card Size: 133,35mm x 25,40mm x 3,00 mm This SDRAM product familiy is intended to be fully pin and architecture compatible with the 168 pin Unbuffered DRAM DIMM module family.
Semiconductor Group
1
4.96
HYS64(72)V1000GS-10/-12/-15 1M x 64/72 SDRAM-Module
The HYS64(72)V1000GS-10/-12/-15 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 1M x 64 and 1M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use four 1M x 16 SDRAMs for the 1M x 64 organisation and an additional SDRAM for the...
