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HYR1625640G Datasheet

Part Number HYR1625640G
Manufacturers Infineon
Logo Infineon
Description Direct RDRAM RIMM Modules
Datasheet HYR1625640G DatasheetHYR1625640G Datasheet (PDF)

HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™) devices. These are extremely high-speed.

  HYR1625640G   HYR1625640G






Direct RDRAM RIMM Modules

HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with indep.


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