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HYM72V8030GS-50

Siemens

8M x 72-Bit Dynamic RAM Module

8M × 72-Bit Dynamic RAM Module (ECC - Module) 168 pin buffered DIMM Module HYM 72V8020GS-50/-60 HYM 72V8030GS-50/-60 •...


Siemens

HYM72V8030GS-50

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Description
8M × 72-Bit Dynamic RAM Module (ECC - Module) 168 pin buffered DIMM Module HYM 72V8020GS-50/-60 HYM 72V8030GS-50/-60 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications 1 bank 8 M x 72 organisation Optimized for ECC applications Fast Page Mode Operation Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 18 30 90 35 -60 60 20 35 110 40 ns ns ns ns ns Single + 3.3V ± 0.3 V supply CAS-before-RAS refresh, RAS-only refresh Decoupling capacitors mounted on substrate All inputs, outputs and clock fully LVTTL & LVCMOS compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ Parallel Presence Detects Utilizes nine 8M × 8 -DRAMs and BiCMOS buffers/line drivers VT244A Two versions: HYM 72V8030GS with SOJ-components ( 9 mm module thickness) HYM 72V8020GS with TSOPII-components ( 4 mm module thickness) 4048 refresh cycles / 64 ms with 12 / 11 addressing Gold contact pad Double sided module with 25.35 mm (1000 mil) height Semiconductor Group 1 6.96 HYM72V8020/30GS-50/-60 8M x 72-ECC Module The HYM 72V8020/30GS-50/-60 is a 64 MByte DRAM module organized as 8 388 608 words by 72bit in a 168-pin, dual read-out, single-in-line package comprising nine HYB3165800AJ/AT 8M × 8 DRAMs in 400 mil wide SOJ or TSOPII - packages mounted together with ceramic decoupling capac...




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