HYM72V8000GS-50-

8M × 72-Bit Dynamic RAM Module (ECC - Module) HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information 8 388 608 words by 72-bit ECC - mode, one bank organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3V ± 0.3 V supply Low power dissipation max. 4536 mW active (-50 version) max. 3888 mW active (-60 version) CMOS – 108 mW standby TTL – 180 mW standby CAS-before-RAS refresh, RAS-only-refresh 9 decoupling capacitors mounted on substrate All inputs, outputs and clock fully LVTTL & LVCMOS compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes nine 8M × 8 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A Two versions: HYM 72V8010GS with SOJ-components ( 9 mm module thickness) HYM 72V8000GS with TSOPII-components ( 4 mm module thickness) 4048 refresh cycles / 64 ms with 12 / 11 addressing Gold contact pad double sided module with 25.35 mm (1000 mil) height Semiconductor Group 1 115.95 HYM72V8000/10GS-50/-60 8M x 72-ECC Module The HYM 72V8000/10GS-50/-60 is a 64 MByte DRAM module organized as 8 388 608 words by 72bit in a 168-pin, dual read-out, single-in-line package comprising five HYB 3165800J/T 8M × 8 DRAMs in 500 mil wide SO...