HYM724010GS-60

4M × 72-Bit Dynamic RAM Module (ECC - Module ) HYM 724000GS-50/-60 HYM 724010GS-50/-60 Preliminary Information 4 194 304 words by 72-bit ECC - mode organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 9900 mW active (-50 version) max. 8910 mW active (-60 version) CMOS – 165 mW standby TTL – 275 mW standby CAS-before-RAS refresh, RAS-only-refresh 18 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes eighteen 4M × 4 -DRAMs in TSOPII-packages and four BiCMOS 8-bit buffers/line drivers 74ABT244 Two versions : HYM 724000GS with TSOPII-components (4.06 mm thickness) HYM 724010GS with SOJ-components (8.89 mm thickness) 4096 refresh cycles / 64 ms with 12 / 10 addressing Gold contact pad double sided module with 25.35 mm (1000 mil) height Semiconductor Group 1 11.95 HYM724000/10GS-50/-60 4M x 72 ECC- Module The HYM 724000/10GS-60/-70 is a 32 MByte DRAM module organized as 4 194 430 words by 72bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 5116400BT/BJ 4M × 4 DRAMs in 300 mil wide TSOP...