HYM368035S

8M × 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Information 8 388 608 words by 36-Bit organization in 2 banks Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time Hyper page mode (EDO) capability 25 ns cycle time Single + 5 V (± 10 %) supply Low power dissipation max. 7260 mW active CMOS – 132 mW standby TTL – 264 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 24 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages 2048 refresh cycles / 32 ms Optimized for use in byte-write parity applications Tin-Lead contact pads (HYM 368035S-60) Gold contact pads (HYM 368035GS-60) Semiconductor Group 1 4.96 HYM 368035S/GS-60 8M × 36-Bit EDO-Module The HYM 368035S/GS-60 is a 32 MByte EDO-DRAM module organized as 8 388 608 words by 36Bit in two banks assembled on a 72-pin single-in-line package comprising 24 HYB 5117305BJ 4M × 3 DRAMs in 300 mil wide SOJ-packages mounted together with 24 0.2 µF ceramic decoupling capacitors on a PC board. The HYB 5117305BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected ...