HYM364025GS-50

4M x 36-Bit EDO - DRAM Module HYM364025S/GS-50/-60 SIMM modules with 4 194 304 words by 36-Bit organization for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6820 mW active (-50 version) max. 6160 mW active (-60 version) CMOS – 66 mW standby TTL –132 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages 2048 refresh cycles / 32 ms Optimized for use in byte-write parity applications Tin-Lead contact pads (S-version) Gold contact pads (GS - version) Semiconductor Group 1 4.97 HYM 364025S/GS-50/-60 4M × 36-Bit EDO-Module The HYM 364025S/GS-50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 36-Bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M × 4 EDO-DRAMs and four HYB 514105BJ 4M x 1 EDO-DRAMs in 300 mil wide SOJ-packages mounted together with ceramic decoupling capacitors on a PC board. Each HYB 5117405BJ and HYB 514105BJ is described in the data sheet and is fully electrical tested and processe...