HYM324000GD-

4M × 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 324000GD-50/-60 Preliminary Information 4 0194 034 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3 V (± 0.3 V) supply Low power dissipation max. 1008 mW active (-50 version) max. 864 mW active (-60 version) LVCMOS – 1.8 mW standby TTL – 14.4 mW standby CAS-before-RAS refresh, RAS-only-refresh. Self Refresh 2 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 72 pin, dual read-out, one bank, Small Outline DIMM Module Utilizes two 4M × 16 -DRAMs (HYB 3165160T) 4096 refresh cycles / 64 ms Gold contact pad Semiconductor Group 181 11.94 HYM324000GD-50/-60 4M x 32 SO-DIMM The HYM 324000GD -50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit in a 72-pin, dual read-out, small outline package comprising two HYB 3165160T 4M × 16 DRAMs in 500 mil wide TSOPII-54 - packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 3165160T is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The density and speed of t...