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HYM322035S Datasheet

Part Number HYM322035S
Manufacturers Siemens
Logo Siemens
Description 2M x 32-Bit Dynamic RAM Module
Datasheet HYM322035S DatasheetHYM322035S Datasheet (PDF)

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • • • 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 26.

  HYM322035S   HYM322035S






Part Number HYM322035GS-70
Manufacturers Siemens
Logo Siemens
Description 2M x 32-Bit Dynamic RAM Module
Datasheet HYM322035S DatasheetHYM322035GS-70 Datasheet (PDF)

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • • • 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 26.

  HYM322035S   HYM322035S







Part Number HYM322035GS-60
Manufacturers Siemens
Logo Siemens
Description 2M x 32-Bit Dynamic RAM Module
Datasheet HYM322035S DatasheetHYM322035GS-60 Datasheet (PDF)

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • • • 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 26.

  HYM322035S   HYM322035S







Part Number HYM322035GS-50
Manufacturers Siemens
Logo Siemens
Description 2M x 32-Bit Dynamic RAM Module
Datasheet HYM322035S DatasheetHYM322035GS-50 Datasheet (PDF)

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • • • 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 26.

  HYM322035S   HYM322035S







2M x 32-Bit Dynamic RAM Module

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • • • 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 2640 mW active (-50 version) max. 2420 mW active (-60 version) max. 2200 mW active (-70 version) CMOS – 22 mW standby TTL –44 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 4 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height Utilizes four 2M × 8 -DRAMs in 400 mil SOJ packages 2048 refresh cycles / 32 ms with 11/10 addressing Optimized for use in byte-write non-parity applications Tin-Lead contact pads (S-version) Gold contact pads (GS - version) • • • • • • • • • • • • Semiconductor Group Semicunductor 1 2.96 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module The HYM 322035S/GS-50/-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-bit in a 72-pin single-in-line package comprising four HYB 5117805BSJ 2M × 8 EDO-DRAMs in 400 mil wide SOJ-packages mounted together with four 0.2 µF ceramic decoupling capacitors on a PC board..


2005-04-23 : DP100S    T510    74HCT166    74HCT173    74HCT174    74HCT175    74HCT181    74HCT182    74HCT190    74HCT191   


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