HY62UF16101CSLF

HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 History Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information Add 100ns speed Draft Date Dec.10. 2000 Remark Final 04 Dec.27. 2000 Final This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.04 /Dec. 00 Hynix Semiconductor HY62UF16101C Series DESCRIPTION The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(LL/SL-part) -. 1.2V(min) data retention Standard pin configuration -. 48 - FBGA Product Voltage Speed No. (V) (ns) HY62UF16101C 2.7~3.3 55/70/85/100 HY62UF16101C-I 2.7~3.3 55/70/85/100 Note 1. Blank : Commercial, I : Industrial 2. Current value is max. Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 5 1 5 1 Tempera...