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HY62SF16806B Datasheet

Part Number HY62SF16806B
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 512Kx16bit full CMOS SRAM
Datasheet HY62SF16806B DatasheetHY62SF16806B Datasheet (PDF)

www.DataSheet4U.com HY62SF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 History Initial Draft Draft Date May.29.2001 Remark Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /May. 2001 Hynix Semiconductor HY62SF16806B Prelim.

  HY62SF16806B   HY62SF16806B






Part Number HY62SF16806A
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 512Kx16bit full CMOS SRAM
Datasheet HY62SF16806B DatasheetHY62SF16806A Datasheet (PDF)

www.DataSheet4U.com HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 01 History Initial Draft Change Logo - Hyundai à Hynix AC Parameter is changed - tCHZ : 30ns --> 20ns - tBHZ : 30ns --> 20ns - tOHZ : 30ns --> 20ns Change DC Parameter - Icc1(1us) : 5mA à 4mA Change Data Retention - IccDR(LL) : 25uA à 15uA Change AC Parameter - tOE : 40ns à 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Pre.

  HY62SF16806B   HY62SF16806B







512Kx16bit full CMOS SRAM

www.DataSheet4U.com HY62SF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 00 History Initial Draft Draft Date May.29.2001 Remark Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /May. 2001 Hynix Semiconductor HY62SF16806B Preliminary DESCRIPTION The HY62SF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16806B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. Product Voltage Speed No. (V) (ns) HY62SF16806B-C 1.65~2.3 70/85/100 HY62SF16806B-I 1.65~2.3 70/85/100 Note 1. C : Commercial, I : Industrial 2. Current value is max. FEATURES • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup(LL/SL-part) - 1.2V(min) data retention • Standard pin configuration - 48-FBGA Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 15 8 15 8 Temperature (°C) 0~70 -40~85 PIN CONNECTION ( Top View ) 1 2 /OE /UB 3 A0 A3 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 /.


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