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HY62SF16804B Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 1.8V Super Low Power Ful...
www.DataSheet4U.com
HY62SF16804B Series
512Kx16bit full
CMOS SRAM
Document Title
512K x16 bit 1.8V Super Low Power Full
CMOS slow SRAM
Revision History
Revision No 00 History Initial Release Draft Date May.29.2001 Remark Preliminary
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 /May.2001 Hynix Semiconductor
HY62SF16804B
Preliminary DESCRIPTION
The HY62SF16804B is a high speed, super low power and 8Mbit full
CMOS SRAM organized as 512K words by 16bits. The HY62SF16804B uses high performance full
CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply
voltage of 1.2V. Product
Voltage Speed No. (V) (ns) HY62SF16804B-C 1.65~2.3 70/85/100 HY62SF16804B-I 1.65~2.3 70/85/100 Note 1. C : Commercial, I : Industrial 2. Current value is max.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup(LL/SL-part) - 1.2V(min) data retention Standard pin configuration - 48-fBGA
Operation Current/Icc(mA) 3 3
Standby Current(uA) LL SL 15 8 15 8
Temperature (°C) 0~70 -40~85
PIN CONNECTION ( Top View )
1 2 3 4 A1 A4 A6 5 A2 NC 6
A0
BLOCK DIAGRAM
ROW DECO...